IRFB9N60A Datasheet, PDF (2/9 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

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IRFB9N60A, SiHFB9N60A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
R_thJA
R_thCS
R_thJC
TYP.
-
0.50
-
MAX.
62
-
0.75
UNIT
°C/W
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V_DS
V_DS/T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
C_iss
C_oss
C_rss
C_oss
C_oss eff.
V_GS = 0 V, I_D = 250 μA
Reference to 25 °C, I_D = 1 mA
V_DS = V_GS, I_D = 250 μA
V_GS = ± 30 V
V_DS = 600 V, V_GS = 0 V
V_DS = 480 V, V_GS = 0 V, T_J = 125 °C
V_GS = 10 V
I_D = 5.5 A ^b
V_DS = 50 V, I_D = 5.5 A
600
-
-
V
-
660
- mV/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
0.75

5.5
-
-
S
V_GS = 0 V,
-
1400
-
V_DS = 25 V,
-
180
-
f = 1.0 MHz, see fig. 5
-
7.1
-
pF
V_DS = 1.0 V, f = 1.0 MHz
-
1957
-
V_GS = 0 V
V_DS = 480 V, f = 1.0 MHz
-
49
-
V_DS = 0 V to 480 V
-
96
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
-
-
49
I_D = 9.2 A, V_DS = 400 V
Q_gs
V_GS = 10 V
see fig. 6 and 13 ^b
-
-
13
nC
Q_gd
-
-
20
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
t_d(on)
t_r
t_d(off)
t_f
R_g
I_S
Pulsed Diode Forward Current ^a
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
-
13
-
V_DD = 300 V, I_D = 9.2 A
-
25
-
ns
R_g = 9.1 , R_D = 35.5 , see fig. 10 ^b
-
30
-
-
22
-
f = 1 MHz, open drain
0.5
-
3.2

MOSFET symbol
showing the 
D
-
integral reverse
G
p - n junction diode
-
S
T_J = 25 °C, I_S = 9.2 A, V_GS = 0 V ^b
-
-
T_J = 25 °C, I_F = 9.2 A, dI/dt = 100 A/μs ^b
-
-
9.2
A
-
37
-
1.5
V
530
800
ns
3.0
4.4
μC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C_oss effective is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 % to 80 % V_DS.
S16-0763-Rev. D, 02-May-16
2
Document Number: 91103
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