IRFB18N50K Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A)

IRFB18N50K, SiHFB18N50K
Vishay Siliconix
750
ID
TOP
7.6A
11A
600
BOTTOM 17A
450
300
150
0
25
50
75
100
125
150
Starting T_J, Junction Temperature (^° C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
V_GS
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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6
Document Number: 91100
S-80567-Rev. A, 20-Jun-08