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| IRFB18N50K Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A) | |||
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IRFB18N50K, SiHFB18N50K
Vishay Siliconix
RD
20
VDS
VGS
D.U.T.
15
RG
+- VDD
10 V
Pulse width ⤠1 µs
Duty factor ⤠0.1 %
10
Fig. 10a - Switching Time Test Circuit
VDS
5
90 %
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.001
0.00001
Notes:
1. Duty factor D =t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
VDS
L
Driver
RG
20 V
tp
D.U.T.
IAS
0.01 Ω
+
- VDAD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91100
S-80567-Rev. A, 20-Jun-08
VDS
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
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