IRFB18N50K Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A)

IRFB18N50K, SiHFB18N50K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
VGS
TOP
15V
12V
10V
10
8.0V
7.0V
6.0V
5.5V
1 ^{BOTTOM 5.0V}
100.00
10.00
1.00
0.1
5.0V
TJ = 150°C
TJ = 25°C
0.01
0.001
0.1
20µs PULSE WIDTH
Tj = 25°C
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
0.10
V_DS = 100V
20µs PULSE WIDTH
0.01
5.0
6.0
7.0
8.0
9.0
10.0
V_GS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
10
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 150°C
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0 _{ID = 17A}
2.5
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (^° C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91100
S-80567-Rev. A, 20-Jun-08
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