IRFB18N50K Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A)

IRFB18N50K, SiHFB18N50K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
500
V_GS = 10 V
120
34
54
Single
0.26
D
TO-220
FEATURES
• Low Gate Charge Q_g Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Low R_DS(on)
• Lead (Pb)-free Available
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
TO-220
IRFB18N50KPbF
SiHFB18N50K-E3
IRFB18N50K
SiHFB18N50K
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting T_J = 25 °C, L = 2.5 mH, R_G = 25 Ω, I_AS = 17 A.
c. I_SD ≤ 17 A, dI/dt ≤ 376 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
17
11
68
1.8
370
17
22
220
7.8
- 55 to + 150
300^d
10
* Pb containing terminations are not RoHS compliant, exemptions may apply
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
N
Document Number: 91100
S-80567-Rev. A, 20-Jun-08
WORK-IN-PROGRESS
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