IRF9620S Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)

IRF9620S, SiHF9620S
Vishay Siliconix
Current regulator
Same type as D.U.T.
- 10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 18a - Basic Gate Charge Waveform
12 V
50 kΩ
0.2 µF
0.3 µF
-
D.U.T. ^{+ VDS}
V_GS
- 3 mA
I_G
I_D
Current sampling resistors
Fig. 18b - Gate Charge Test Circuit
D.U.T.
+
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-
R_g
• dV/dt controlled by R_g
+
• I_SD controlled by duty factor “D”
• D.U.T. - device under test
- ^VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
V_GS = - 10 V^a
D.U.T. l_SD waveform
Reverse
recovery
Body diode forward
current
current
dI/dt
D.U.T. V_DS waveform
Diode recovery
dV/dt
V_DD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 %
I_SD
Note
a. V_GS = - 5 V for logic level and - 3 V drive devices
Fig. 19 - For P-Channel
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91083.
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6
Document Number: 91083
S11-1051-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000