IRF9620S Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)

IRF9620S, SiHF9620S
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
-5
V_GS = - 10, - 9, - 8, - 7 V
-4
-6V
-3
-2
-1
0
0
-5V
-4V
- 10
- 20
80 µs Pulse Test
- 30
- 40
- 50
91083_01
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
-5
80 µs Pulse Test
-4
V_GS = - 10, - 9, - 8, - 7 V
-3
-6V
-2
-5V
-1
-4V
0
0
-1
-2
-3
-4
-5
91083_03
V_DS, Drain-to-Source Voltage (V)
Fig. 3 - Typical Saturation Characteristics
-5
T_J = - 55 °C
-4
T_J = 25 °C
-3
T_J = 125 °C
-2
-1
0
0
80 µs Pulse Test
V_DS > I_D(on) x R_DS(on) max.
-2
-4
-6
-8
- 10
91083_02
V_GS, Gate-to-Source Voltage (V)
Fig. 2 - Typical Transfer Characteristics
10²
Operation in this area limited
5
by R_DS(on)
2
10
100 µs
5
2
1
5
2
0.1
1²
1 ms
10 ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
5 ₁₀ 2
5 ₁₀₂ 2
5 ₁₀₃
91083_04
Negative V_DS, Drain-to-Source Voltage (V)
Fig. 4 - Maximum Safe Operating Area
2.0
1.0
0.5 D = 0.5
0.2 ^0.2
0.1
0.1
0.05
0.05 _0.02
0.01
0.02
0.01
10^{-5 2}
Single Pulse (Transient
Thermal Impedence)
5 _10-4 2
5 _10-3 2
5 _10-2 2
P_DM
t₁
t₂
Notes:
1. Duty Factor, D = t₁/t₂
2. Per Unit Base = R_thJC = 3.12 °C/W
3. T_JM - T_C = P_DM Z_thJC(t)
5 _0.1 2
5 _1.0 2
5 ₁₀
91083_05
t₁, Square Wave Pulse Duration (s)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Document Number: 91083
S11-1051-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000