IRF9620S Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)

Power MOSFET
IRF9620S, SiHF9620S
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
- 200
V_GS = - 10 V
1.5
Q_g (Max.) (nC)
22
Q_gs (nC)
12
Q_gd (nC)
10
Configuration
Single
S
D²PAK (TO-263)
G
GD
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D²PAK (TO-263)
SiHF9620S-GE3
IRF9620SPbF
SiHF9620S-E3
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The D²PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D²PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
D²PAK (TO-263)
SiHF9620STRL-GE3^a
IRF9620STRLPbF^a
SiHF9620STL-E3^a
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor (PCB Mount)^e
Inductive Current, Clamp
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
T_C = 25 °C
T_A = 25 °C
I_LM
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not Applicable
c. I_SD  - 3.5 A, dI/dt  95 A/μs, V_DD  V_DS, T_J  150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
LIMIT
- 200
± 20
- 3.5
- 2.0
- 14
0.32
0.025
- 14
40
3.0
- 5.0
- 55 to + 150
300^d
UNIT
V
A
W/°C
A
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91083
S11-1051-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000