IRF9620S Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)

IRF9620S, SiHF9620S
Vishay Siliconix
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R_DS(on) measured with current
pulse of 2.0 µs duration. Initial
4 ^{TJ = 25 °C. (Heating effect of}
2.0 µs pulse is minimal.)
V_GS = - 10 V
3
2
V_GS = - 20 V
1
0
0
-4
-8
- 12
- 16
- 20
91083_12
I_D, Drain Current (A)
Fig. 12 - Typical On-Resistance vs. Drain Current
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
91083_13
T_C, Case Temperature (°C)
Fig. 13 - Maximum Drain Current vs. Case Temperature
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140
91083_14
T_C, Case Temperature (°C)
Fig. 14 - Power vs. Temperature Derating Curve
L
Vary t_p to obtain
required I_L
VGS = - 10 V tp
D.U.T.
V_DS
V_DD
-
+
EC
I_L
VDD = 0.5 VDS
0.05 Ω
EC = 0.75 VDS
Fig. 15 - Clamped Inductive Test Circuit
V_DD
I_L
t_p
V_DS
E_C
Fig. 16 - Clamped Inductive Waveforms
V_DS
V_GS
R_G
R_D
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+V_DD
Fig. 17a - Switching Time Test Circuit
V_GS
10 %
t_d(on) t_r
t_d(off) t_f
90 %
V_DS
Fig. 17b - Switching Time Waveforms
Document Number: 91083
S11-1051-Rev. C, 30-May-11
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