IRF830AS Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
500
ID
TOP
2.2A
3.2A
400
BOTTOM 5.0A
300
200
100
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
790
785
780
775
770
0.0
1.0
2.0
3.0
4.0
I _av , A valanc he Current (A)
Fig. 12d - Basic Gate Charge Waveform
A
5.0
V_GS
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91062
S-81352-Rev. A, 16-Jun-08