IRF830AS Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Max.) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
500
V_GS = 10 V
24
6.3
11
Single
1.40
D
I²PAK
D²PAK
(TO-262)
(TO-263)
G
SD
D
G
S
G
S
N-Channel MOSFET
FEATURES
• Low Gate Charge Q_g Results in Simple Drive
Requirement
Available
• Improved Gate, Avalanche and Dynamic dV/dt RoHS*
COMPLIANT
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C_oss specified
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High speed power switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge and Full Bridge
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRF830ASPbF
SiHF830AS-E3
SnPb
IRF830AS
SiHF830AS
Note
a. See device orientation.
D²PAK (TO-263)
IRF830ASTRLPbF^a
SiHF830ASTL-E3^a
IRF830ASTRL^a
SiHF830ASTL^a
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^{a, e}
Linear Derating Factor
Single Pulse Avalanche Energy^{b, e}
Avalanche Current^a
Repetiitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
T_A = 25 °C
T_C = 25 °C
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25 °C, L = 18 mH, R_G = 25 Ω, I_AS = 5.0 A (see fig. 12).
c. I_SD ≤ 5.0 A, dI/dt ≤ 370 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. Uses SiHF830A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
I²PAK (TO-262)
IRF830ALPbF
SiHF830AL-E3
IRF830AL
SiHF830AL
LIMIT
500
± 30
5.0
3.2
20
0.59
230
5.0
7.4
3.1
74
5.3
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91062
S-81352-Rev. A, 16-Jun-08
www.vishay.com
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