IRF830AS Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
1
1
0.1
4.5V
T_J = 150 ^°C
T_J = 25 ^°C
0.01
0.1
20µs PULSE WIDTH
TJ = 25 ^°C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
V _DS = 50V
20µs PULSE WIDTH
0.1
4.0
5.0
6.0
7.0
8.0
V_GS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
1
20µs PULSE WIDTH
TJ = 150 ^°C
10
100
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
2.5 _{ID = 5.0A}
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91062
S-81352-Rev. A, 16-Jun-08
www.vishay.com
3