IRF830AS Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
T_C , Case Temperature ( ^°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- _VDD
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
1 _{D = 0.50}
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
P_DM
t₁
t₂
1. Duty factor D = t₁ / t ₂
0.01
0.00001
0.0001
0.001
2. Peak T _J = P _DM x Z _thJC + T_C
0.01
0.1
1
t₁ , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
V_DS
L
Driver
R_G
20 V
t_p
D.U.T.
I_AS
0.01 Ω
+
- ^VD^AD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91062
S-81352-Rev. A, 16-Jun-08
V_DS
t_p
I_AS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5