IRF820 Datasheet, PDF (6/8 Pages) Motorola, Inc – N-CHANNEL Enhancement-Mode Silicon Gate TMOS

IRF820, SiHF820
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test
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6
Document Number: 91059
S-81276-Rev. A, 16-Jun-08