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IRF820 Datasheet, PDF (2/8 Pages) Motorola, Inc – N-CHANNEL Enhancement-Mode Silicon Gate TMOS
◁
IRF820, SiHF820
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
2.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.5 Ab
VDS = 50 V, ID = 1.5 A
500
-
-
V
-
0.59
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
3.0
Ω
1.5
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
-
VGS = 10 V
ID = 2.1 A, VDS = 400 V,
see fig. 6 and 13b
-
-
-
VDD = 250 V, ID = 2.1 A,
-
RG = 18 Ω, RD = 100 Ω, see fig. 10b
-
-
360
-
92
-
pF
37
-
-
24
-
3.3
nC
-
13
8.0
-
8.6
-
ns
33
-
16
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-
-
2.5
A
-
-
8.0
Body Diode Voltage
VSD
TJ = 25 °C, IS = 51 A, VGS = 0 Vb
-
-
1.6
V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
-
260
520
ns
TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs
-
0.7
1.4
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91059
S-81276-Rev. A, 16-Jun-08
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