IRF820 Datasheet, PDF (3/8 Pages) Motorola, Inc – N-CHANNEL Enhancement-Mode Silicon Gate TMOS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRF820, SiHF820
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, T_C = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T_C = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91059
S-81276-Rev. A, 16-Jun-08
www.vishay.com
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