DG408L_11 Datasheet, PDF (6/15 Pages) Vishay Siliconix – Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers

DG408L, DG409L
Vishay Siliconix
SPECIFICATIONS (Single Supply 3 V)
Parameter
Analog Switch
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %, V- = 0 V
V_EN = 0.4 V or 2 V^f
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.^b Typ.^d Min.^c Max.^c Min.^c Max.^c Unit
Analog Signal Range^e
V_ANALOG
Full
0
3
0
3
V
Drain-Source
On-Resistance
Switch Off Leakage
Current^a
R_DS(on)
V+ = 2.7 V, V_D = 0.5 or 2.2 V,
I_S = 5 mA
Room 60
Full
80
105
80
100

I_S(off)
I_D(off)
V+ = 3.3 V, V_S = 2 or 1 V, V_D = 1 or 2 V
Room
Full
Room
Full
-1
1
-1
1
- 15
15
- 10 10
-1
- 15
1
15
-1
- 10
1
10
nA
Channel On Leakage
Current^a
I_D(on)
V+ = 3.3 V, V_D = V_S = 1 or 2 V
sequence each switch on
Room
Full
-1
1
-1
1
- 15
15
- 10 10
Digital Control
Logic High Input Voltage
Logic Low Input Voltage
V_INH
V_INL
Full
2
2
V
Full
0.4
0.4
Input Current^a
I_IN
V_AX = V_EN = 2.4 V or 0.4 V
Full
- 1.5 1.5
-1
1
µA
Dynamic Characteristics
Transition Time
t_TRANS
V_S1 = 1.5 V, V_S8 = 0 V, (DG408L)
V_S1b = 1.5 V, V_S4b = 0 V, (DG409L)
Room
Full
75
see figure 2
150
150
175
175
Break-Before-Make Time
t_OPEN
V_S(all) = V_DA = 1.5 V,
see figure 4
Room 32
1
Full
1
ns
Enable Turn-On Time
Enable Turn-Off Time
t_ON(EN)
t_OFF(EN)
Room 70
V_AX = 0 V, V_S1 = 1.5 V (DG408L)
Full
V_AX = 0 V, V_S1b = 1.5 V (DG409L)
see figure 3
Room
Full
55
95
95
115
105
100
100
115
105
Charge Injection^e
Q
C_L = 1 nF, R_GEN = 0 , V_GEN = 0 V Room 0.4
5
5
pC
Off Isolation^{e, h}
Crosstalk^e
OIRR
X_TALK
R_L = 1 k, f = 100 kHz
Room - 70
Room - 79
dB
Source Off Capacitance^e
C_S(off)
f = 1 MHz, V_S = 0 V, V_EN = 0 V
Room 8
Drain Off Capacitance^e
C_D(off)
f = 1 MHz, V_D = 0 V, V_EN = 0 V
Room 19
pF
Drain On Capacitance^e
C_D(on)
f = 1 MHz, V_D = 0 V, V_EN = 2 V
(DG409L only)
Room 33
Notes:
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. V_IN = input voltage to perform proper function.
g. R_DS(on) = R_DS(on) max. - R_DS(on) min.
h. Worst case isolation occurs on channel 4 do to proximity to the drain pin.
i. R_DS(on) flatness is measured as the difference between the minimum and maximum measured values across a defined analog signal.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 71342
6
S11-1066-Rev. G, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000