91034 Datasheet, PDF (6/9 Pages) Vishay Siliconix – Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedlzed device design, low on-resistance and cost-effectiveness

IRF634, SiHF634
Vishay Siliconix
V_DS
Vary t_p to obtain
required I_AS
R_G
10 V
t_p
L
D.U.T
I_AS
0.01 Ω
+
- ^VDD
A
Fig. 12a - Unclamped Inductive Test Circuit
V_DS
V_DS
t_p
V_DD
I_AS
Fig. 12b - Unclamped Inductive Waveforms
700
I_D
600
Top 3.6 A
5.1 A
500
Bottom 8.1 A
400
300
200
100
0 ^{VDD = 50 V}
25
50
75
100
125
150
91034_12c
Starting T_J, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91034
S11-0509-B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000