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| 91034 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedlzed device design, low on-resistance and cost-effectiveness | |||
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IRF634, SiHF634
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ïVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 5.1 Ab
VDS = 50 V, ID = 5.1 Ab
250
-
-
V
-
0.37
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
0.45
ï
1.6
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
-
VGS = 10 V
ID = 5.6 A, VDS = 200 V,
see fig. 6 and 13b
-
-
-
VDD = 125 V, ID = 5.6 A,
-
Rg = 12 ï, RD = 22ï ï, see fig. 10b
-
-
770
-
190
-
pF
52
-
-
41
-
6.5
nC
-
22
9.6
-
21
-
ns
42
-
19
-
Internal Drain Inductance
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
4.5
-
nH
-
7.5
-
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
8.1
A
-
-
32
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 8.1 A, VGS = 0 Vb
-
-
2.0
V
trr
-
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb
220
440
ns
Qrr
-
1.2
2.4
μC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ï£ 300 μs; duty cycle ï£ 2 %.
www.vishay.com
2
Document Number: 91034
S11-0509-B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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