91034 Datasheet, PDF (5/9 Pages) Vishay Siliconix – Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedlzed device design, low on-resistance and cost-effectiveness

IRF634, SiHF634
Vishay Siliconix
10
8
6
4
2
0
25
91034_09
50
75
100
125
150
T_C, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+_{- VDD}
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
10
1 _{0 - 0.5}
0.2
0.1
0.1 ^0.05
0.02
0.01
10^-2
10^-5
91034_11
Single Pulse
(Thermal Response)
10^-4
10^-3
10^-2
0.1
t₁, Rectangular Pulse Duration (s)
P_DM
t₁
t₂
Notes:
1. Duty Factor, D = t₁/t₂
2. Peak T_j = P_DM x Z_thJC + T_C
1
10
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91034
S11-0509-B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000