91034 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedlzed device design, low on-resistance and cost-effectiveness

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF634, SiHF634
Vishay Siliconix
V_GS
Top 15 V
10 V
10¹
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10⁰
4.5 V
10^-1
91034_01
20 µs Pulse Width
T_C = 25 °C
10⁰
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T_C = 25 °C
10¹
150 °C
25 °C
10⁰
10^-1
4
91034_03
20 µs Pulse Width
V_DS = 50 V
5
6
7
8
9
10
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
V_GS
Top 15 V
10 V
10¹
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10⁰
4.5 V
91034_02
20 µs Pulse Width
T_C = 150 °C
10⁰
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T_C = 150 °C
3.0
I_D = 5.6 A
V_GS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91034_04
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91034
S11-0509-B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000