VS-VSKT570-16PBF Datasheet, PDF (5/8 Pages) Vishay Siliconix – High current capability

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VS-VSKT570-16PbF
Vishay Semiconductors
1200
1000
ØØ
800 _{Conduction angle}
600
180°
120°
90°
60°
30°
400
200
0
0
VSKT570-16PbF
200 400 600 800 1000 1200
Total RMS Output Current (A)
900
800
R_{ths_a} = 0.09 - Delta R
700
500
500
00.02.1.1K62/KWK/W/W
400 _{0.3 K/W}
300 0.4 _K/W
200 ^{0.6 K/W}
100
0
0
20
40
60
80 100 120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
10 000
1000
135 °C
0.1
VSKT570-16PbF
Per junction
100
25 °C
0.01
10
VSKT570-16PbF
Per junction
1
0
0.5
1
1.5
2
Maximum Instantaneous On-State Voltage (V)
Fig. 8 - On-State Voltage Drop Characteristics
Steady state value
R = 0.06 K/W
(DC operation)
0.001
0.001 0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance Z_thJC Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω;
t_r ≤ 1 µs
10
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
t_r ≤ 1 µs
(a)
(b)
(1) P_GM = 10 W, t_p = 4 ms
(2) P_GM = 20 W, t_p = 2 ms
(3) P_GM = 40 W, t_p = 1 ms
(4) P_GM = 60 W, t_p = 0.66 ms
1
0.1
0.001
V_GD
I_GD
0.01
(1) (2) (3) (4)
VSK.570... Series
Frequency limited by P_G(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 10 - Gate Characteristics
1000
Revision: 05-Dec-16
5
Document Number: 94683
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