VS-VSKT570-16PBF Datasheet, PDF (4/8 Pages) Vishay Siliconix – High current capability

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130
VSKT570-16PbF
R_thJC (DC) = 0.06 K/W
120
110
Ø
Conduction angle
100
90
80
60°
30°
90°
180°
70
120°
60
0 50 100 150 200 250 300 350 400 450 500 550 600
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
130
VSKT570-16PbF
R_thJC (DC) = 0.06 K/W
120
110
Ø
Conduction Period
100
90
80
60°
70
60
50
0
180°
DC
30°
120°
90°
100 200 300 400 500 600 700 800 900
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
1000
800
180°
120°
90°
60°
30°
600
RMS limit
400
200
0
0
Ø
Conduction angle
VSKT570-16PbF
Per junction
T_J = 130 °C
100 200 300 400 500 600 700
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
VS-VSKT570-16PbF
Vishay Semiconductors
1300
1200
180°
1100
120°
1000
90°
60°
900
30°
DC
800
700
RMS limit
600
500
400
Ø
300
Conduction period
200
VSKT570-16PbF
100
Per junction
0
0 100 200 300 400 500 600 700 800 900 1000 1100
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
16 500
15 500
14 500
13 500
At any rated load condition and with
rated V_RRM applied following surge.
Initial T_J = 135 °C
at 50 Hz 0.0100 s
at 60 Hz 0.0083 s
12 500
11 500
10 500
9500
8500 VSKT570-16PbF
7500
Per junction
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
17 000
15 000
13 000
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial T_J = 135 °C
Rated V_RRM reapplied
No voltage reapplied
11 000
9000
7000
VSKT570-16PbF
Per junction
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 05-Dec-16
4
Document Number: 94683
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