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| VS-VSKT570-16PBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – High current capability | |||
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www.vishay.com
VS-VSKT570-16PbF
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average on-state current ï
at case temperature
IT(AV)
180° conduction, half sine wave
Maximum RMS on-state current
Maximum peak, one-cycle, ï
non-repetitive on-state surge current
IT(RMS)
ITSM,
IFSM
Maximum I2t for fusing
I2t
Maximum I2ït for fusing
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
I2ït
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
180° conduction, half sine wave at TC = 85 °C
t = 10 ms
t = 8.3 ms
No voltageï
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRMï
reapplied
No voltageï
reapplied
Sinusoidalï
half wave,ï
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRMï
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ = TJ maximum
(I > ï° x IT(AV)), TJ = TJ maximum
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ = TJ maximum
(I > ï° x IT(AV)), TJ = TJ maximum
Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse
TJ = 25 °C, anode supply 12 V resistive load
VALUES
570
85
894
18.0
18.8
15.1
15.8
1620
1473
1146
1042
16 200
0.59
0.63
0.41
0.38
1.36
500
1000
UNITS
A
°C
A
kA
kA2s
kA2ïs
V
mï
V
mA
SWITCHING
PARAMETER
SYMBOL
Maximum rate of rise of turned-on current dI/dt
Typical delay time
td
Typical turn-off time
tq
TEST CONDITIONS
TJ = TJ maximum, ITM = 400 A, VDRM applied
Gate current 1 A, dIg/dt = 1 A/μsï
Vd = 0.67 % VDRM, TJ = 25 °C
ITM = 750 A; TJ = TJ maximum, dI/dt = - 60 A/μs,ï
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 ï
VALUES
1000
2.0
65 to 240
UNITS
A/μs
μs
BLOCKING
PARAMETER
Maximum critical rate of rise ï
of off-state voltage
RMS insulation voltage
Maximum peak reverse and ï
off-state leakage current
SYMBOL
TEST CONDITIONS
dV/dt
VINS
IRRM,
IDRM
TJ = TJ maximum, linear to VD = 80 % VDRM
t=1s
TJ = TJ maximum, rated VDRM/VRRM applied
VALUES
1000
3000
110
UNITS
V/μs
V
mA
Revision: 05-Dec-16
2
Document Number: 94683
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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