VS-VSKT570-16PBF Datasheet, PDF (3/8 Pages) Vishay Siliconix – High current capability

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TRIGGERING
PARAMETER
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
VS-VSKT570-16PbF
Vishay Semiconductors
SYMBOL
P_GM
P_G(AV)
+I_GM
+V_GM
-V_GM
I_GT
V_GT
I_GD
V_GD
TEST CONDITIONS
T_J = T_J maximum, t_p  5 ms
T_J = T_J maximum, f = 50 Hz, d% = 50
T_J = T_J maximum, t_p  5 ms
T_J = 25 °C, V_ak 12 V
T_J = T_J maximum
VALUES
10
2.0
3.0
20
5.0
200
3.0
10
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance, 
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
SYMBOL
TEST CONDITIONS
T_J
T_Stg
R_thJC
DC operation
R_thC-hs Mounting surface smooth, flat and greased
VALUES UNITS
-40 to +135
°C
-40 to +125
0.06
K/W
0.02
Mounting torque ± 10 %
SMAP to heatsink
busbar to SMAP
A mounting compound is recommended and
6-8
the torque should be rechecked after a period of
3 hours to allow for the spread of the
Nm
compound.
12-15
Approximate weight
1500
g
Case style
See dimensions (link at the end of datasheet) SUPER MAGN-A-PAK
R_thJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION
180°
0.009
RECTANGULAR CONDUCTION
0.006
TEST CONDITIONS
120°
90°
60°
30°
0.011
0.014
0.021
0.037
0.011
0.015
0.022
0.038
T_J = T_J maximum
Note
• Table shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
UNITS
K/W
Revision: 05-Dec-16
3
Document Number: 94683
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