VS-GB90DA60U Datasheet, PDF (5/10 Pages) Vishay Siliconix – Fully isolated package

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4
3.5
E_on
3
2.5
E_off
2
1.5
1
0.5
0
0
10
20
30
40
50
R_g (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. R_g
T_J = 125 °C, I_C = 100 A, L = 500 μH,
V_CC = 360 V, V_GE = 15 V, Diode used: 60APH06
1
t_d(on)
t_d(off)
t_r
0.1
t_f
0.01
0
10
20
30
40
50
60
R_g (Ω)
Fig. 12 - Typical IGBT Switching Time vs. R_g
T_J = 125 °C, L = 500 μH, V_CC = 360 V,
I_C = 100 A, V_GE = 15 V, Diode used: 60APH06
200
180
160
125 °C
140
V_R = 200 V
I_F = 50 A
120
100
80
25 °C
60
40
100
di_F/dt (A/μs)
1000
Fig. 13 - Typical Reverse RecoveryTime vs. dI_F/dt, of Diode
VS-GB90DA60U
Vishay Semiconductors
2000
1500
V_R = 200 V
I_F = 50 A
125 °C
1000
500
25 °C
0
100
1000
di_F/dt (A/μs)
Fig. 14 - Typical Stored Charge vs. dI_F/dt of Diode
35
V_R = 200 V
30 _{IF = 50 A}
25
20
125 °C
15
10
25 °C
5
0
100
1000
di_F/dt (A/μs)
Fig. 15 - Typical Reverse Recovery Current vs. dI_F/dt of Diode
Revision: 25-Jun-13
5
Document Number: 94771
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