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VS-GB90DA60U Datasheet, PDF (2/10 Pages) Vishay Siliconix – Fully isolated package
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VS-GB90DA60U
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES)
VGE = 0 V, IC = 250 μA
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
Collector to emitter leakage current
Forward voltage drop, diode
Gate to emitter leakage current
VCE(on)
VGE(th)
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
VGE = 15 V, IC = 100 A, TJ = 150°C
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 250 μA, TJ = 125 °C
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
VGE = 0 V, VCE = 600 V
ICES
VGE = 0 V, VCE = 600 V, TJ = 125 °C
VGE = 0 V, VCE = 600 V, TJ = 150 °C
IC = 100 A, VGE = 0 V
VFM
IC = 100 A, VGE = 0 V, TJ = 125 °C
IC = 100 A, VGE = 0 V, TJ = 150 °C
IGES
VGE = ± 20 V
MIN.
600
-
-
-
3
-
-
-
-
-
-
-
-
-
TYP.
-
2.4
3
3.3
3.9
2.5
- 10
7
1.5
6
1.6
1.56
1.53
-
MAX.
-
2.8
3.4
-
5.0
-
-
100
6.0
10
2.1
2.0
-
± 200
UNITS
V
mV/°C
μA
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
trr
Irr
Qrr
trr
Irr
Qrr
IC = 100 A, VCC = 480 V, VGE = 15 V
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode
recovery.
Diode used
60APH06
TJ = 150 °C, IC = 300 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 400 V,
VP = 600 V, L = 500 μH
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
460
160
70
0.39
1.10
1.49
245
53
240
63
0.52
1.24
1.76
240
54
250
80
MAX.
690
250
130
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
-
95
-
-
10
-
-
480
-
-
144
-
-
16
-
-
1136
-
UNITS
nC
mJ
ns
mJ
ns
ns
A
nC
ns
A
nC
Revision: 25-Jun-13
2
Document Number: 94771
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