VS-GB90DA60U Datasheet, PDF (4/10 Pages) Vishay Siliconix – Fully isolated package

www.vishay.com
VS-GB90DA60U
Vishay Semiconductors
160
140
120
100
T_J = 150 °C
80
60
T_J = 125 °C
40
20
T_J = 25 °C
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V_GE - Gate-to-Emitter Voltage (V)
Fig. 5 - Typical IGBT Transfer Characteristics
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0
Ic = 100 A
Ic = 75 A
Ic = 50 A
Ic = 30 A
20 40 60 80 100 120 140 160
T_J - Junction Temperature (V)
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, V_GE = 15 V
100
10
T_J = 150 °C
1
T_J = 125 °C
0.1
0.01
0.001
T_J = 25 °C
0.0001
0
100 200 300 400 500 600
V_CES - Collector-to-Emitter Voltage (V)
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
5
4.5
4
T_J = 25 °C
3.5
3
2.5
T_J =125 °C
2
1.5
1
0.20
0.40
0.60
0.80
1.00
I_C (mA)
Fig. 7 - Typical IGBT Threshold Voltage
1.6
1.4
E_off
1.2
1
0.8
0.6
E_on
0.4
0.2
0
10 20 30 40 50 60 70 80 90 100 110 120
I_C - Collector Current (A)
Fig. 9 - Typical IGBT Energy Losses vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 360 V,
R_g = 5 , V_GE = 15 V, Diode used: 60APH06
1
t_d(off)
t_d(on)
0.1
t_f
t_r
0.01
0
20 40 60
80 100 120
I_C - Collector Current (A)
Fig. 10 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 360 V,
R_g = 5 , V_GE = 15 V, Diode used: 60APH06
Revision: 25-Jun-13
4
Document Number: 94771
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000