VS-GB90DA60U Datasheet, PDF (3/10 Pages) Vishay Siliconix – Fully isolated package

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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature
Junction to case
IGBT
Diode
T_J, T_Stg
R_thJC
Case to sink thermal resistance, flat greased
surface
R_thCS
Mounting torque, on termianls and heatsink
T
Weight
Case style
MIN.
- 40
-
-
-
-
-
VS-GB90DA60U
Vishay Semiconductors
TYP.
-
-
-
0.1
-
30
SOT-227
MAX.
150
0.20
0.33
-
1.3
-
UNITS
°C
°C/W
Nm
g
160
140
120
DC
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
I_C - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
300
V_GE = 15V
250
T_J = 125 °C
200
150
T_J = 25 °C
100
T_J = 150 °C
50
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
V_CE - Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Collector to Emitter Voltage (V)
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160 180 200
I_F - Continuous Forward Current (A)
Fig. 3 - Maximum Allowable Forward Current vs.
Case Temperature, Diode Leg
200
160
T_J = 150 °C
120
80
T_J = 25 °C
40
T_J = 125 °C
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V_F - Forward Voltage Drop (V)
Fig. 4 - Typical Forward Voltage Drop Characteristics
Revision: 25-Jun-13
3
Document Number: 94771
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