VS-GB300TH120N Datasheet, PDF (5/7 Pages) Vishay Siliconix – Fast and soft reverse recovery antiparallel FWD

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VS-GB300TH120N
Vishay Semiconductors
25
20
15
E_rec
10
V_CC = 600 V
5
I_F = 300 A
V_GE = - 15 V
T_J = 125 °C
0
0
10
20
30
40
50
R_g (Ω)
Fig. 9 - Diode Switching Loss vs. Gate Resistance R_g
1
0.1
Diode
0.01
0.001
0.001
0.01
0.1
1
10
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95525
Revision: 12-Jun-15
5
Document Number: 94750
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