VS-GB300TH120N Datasheet, PDF (3/7 Pages) Vishay Siliconix – Fast and soft reverse recovery antiparallel FWD

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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature range
T_J
Storage temperature range
T_STG
Junction to case
IGBT
Diode
R_thJC
Case to sink
R_thCS
Conductive grease applied
Mounting torque
Power terminal screw: M6
Mounting screw: M6
Weight
VS-GB300TH120N
Vishay Semiconductors
MIN. TYP. MAX. UNITS
-
-
150
°C
-40
-
125
-
- 0.076
-
- 0.100 K/W
- 0.035 -
2.5 to 5.0
Nm
3.0 to 5.0
300
g
600
500
25 °C
400
125 °C
300
200
100
0
0
V_GE = 15 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4
V_CE (V)
Fig. 1 - IGBT Typical Output Characteristics
600
V_CE = 20 V
500
400
300
200
125 °C
100
25 °C
0
6
7
8
9 10 11 12 13
V_GE (V)
Fig. 2 - IGBT Typical Transfer Characteristics
100
90
80
70
60
50
40
30
20
10
0
0
V_CC = 600 V
R_g = 4.7 Ω
V_GE = ± 15 V
T_J = 125 °C
E_off
E_on
100
200 300 400 500 600
I_C (A)
Fig. 3 - IGBT Switching Loss vs. I_C
250
V_CC = 600 V
I_C = 300 A
200 ^VGE ^{= ± 15 V}
T_J = 125 °C
150
E_on
100
E_off
50
0
0
10
20
30
40
50
R_g (Ω)
Fig. 4 - IGBT Switching Loss vs. R_g
Revision: 12-Jun-15
3
Document Number: 94750
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