VS-GB300TH120N Datasheet, PDF (4/7 Pages) Vishay Siliconix – Fast and soft reverse recovery antiparallel FWD

www.vishay.com
VS-GB300TH120N
Vishay Semiconductors
700
600
I_C, module
500
400
300
200
100
R_g = 4.7 Ω
V_GE = ± 15 V
0
T_J = 125 °C
0
300
600
900
V_CE (V)
Fig. 5 - RBSOA
1200
1500
0.1
IGBT
0.01
0.001
0.001
0.01
0.1
1
10
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
600
500
25 °C
400
300
125 °C
200
100
0
0
0.5
1
1.5
2
2.5
3
V_F (V)
Fig. 7 - Typical Forward Characteristics
40
35
30
25
20
15
10
5
0
0
E_rec
V_CC = 600 V
R_g = 4.7 Ω
V_GE = - 15 V
T_J = 125 °C
100 200 300 400 500 600
I_F (A)
Fig. 8 - Diode Switching Loss vs. I_F
Revision: 12-Jun-15
4
Document Number: 94750
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000