VS-GB300TH120N Datasheet, PDF (1/7 Pages) Vishay Siliconix – Fast and soft reverse recovery antiparallel FWD

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VS-GB300TH120N
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 1200 V and 300 A
Double INT-A-PAK
FEATURES
• 10 μs short circuit capability
• V_CE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
V_CES
I_C at T_C = 80 °C
V_CE(on) (typical)
at I_C = 300 A, 25 °C
Speed
Package
Circuit
1200 V
300 A
2.00 V
8 kHz to 30 kHz
Double INT-A-PAK
Half bridge
TYPICAL APPLICATIONS
• UPS
• Inverter for motor drive
• AC and DC servo drive amplifier
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
V_CES
Gate to emitter voltage
V_GES
Collector current
T_C = 25 °C
I_C
T_C = 80 °C
Pulsed collector current
I_CM ⁽¹⁾
t_p = 1 ms
Diode continuous forward current
I_F
T_C = 80 °C
Diode maximum forward current
I_FM
t_p = 1 ms
Maximum power dissipation
P_D
T_J = 150 °C
Short circuit withstand time
t_SC
T_J = 125 °C
RMS isolation voltage
V_ISOL
f = 50 Hz, t = 1 min
Note
(1) _{Repetitive rating: pulse width limited by maximum junction temperature.}
MAX.
1200
± 20
500
300
600
300
600
1645
10
2500
UNITS
V
A
W
μs
V
Revision: 12-Jun-15
1
Document Number: 94750
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000