VS-GB100TS60NPBF Datasheet, PDF (5/9 Pages) Vishay Siliconix – INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 A

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VS-GB100TS60NPbF
Vishay Semiconductors
90
10
80
Ic = 100A
70
1
Ic = 50A
Ic = 25A
60
50
600
800 1000 1200 1400 1600 1800
dI_F / dt (A/μs)
Fig. 13 - Typical Diode I_rr vs. dI_F/dt,
T_J = 125 °C, V_CC = 360 V, I_F = 150 A, V_GE = 15 V
9
8
7
6
5
4
3
2
1
0
10
20
30
40
50
R_G (Ω)
Fig. 14 - Typical Switching Losses vs. Gate Resistance,
T_J = 125 °C, L = 200 μH, R_g = 10 ,
V_CC = 360 V, V_GE = 15 V
1
0.1
0
25
50
75
100 125
T_J - Junction Temperature (°C)
Fig. 15 - Typical Switching Losses vs. Junction Temperature,
L = 200 μH, R_g = 10 , V_CC = 360 V, V_GE = 15 V
2.5
2
1.5
1
0.5
0
20
40
60
80
100
I_C (A)
Fig. 16 - Typical Switching Losses vs.
Collector to Emitter Current,
T_J = 125 °C, R_g1 = 4.7 V, R_g2 = 0 , V_CC = 360 V, V_GE = 15 V
D = 0.5
0.1
0.01
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Response)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
t₁ , Rectangular Pulse Duration (sec)
Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Revision: 10-Jun-15
5
Document Number: 94501
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