 English |
|
|
|
|
|
|
|
| VS-GB100TS60NPBF Datasheet, PDF (2/9 Pages) Vishay Siliconix – INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 A | |||
| |||
| ◁ |
www.vishay.com
VS-GB100TS60NPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage VBR(CES)
Collector to emitter voltage
VCE(on)
Gate threshold voltage
Collector to emitter leakage current
VGE(th)
ICES
Diode forward voltage drop
VFM
Gate to emitter leakage current
IGES
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 50 A, TJ = 125 °C
VGE = 15 V, IC = 100 A, TJ = 125 °C
VCE = VGE, IC = 500 μA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150 °C
IC = 50 A
IC = 100 A
IC = 50 A, TJ = 125 °C
IC = 100 A, TJ = 125 °C
VGE = ± 20 V
MIN.
600
-
-
-
-
3
-
-
-
-
-
-
-
TYP.
-
1.95
2.6
2.21
3.05
4.6
0.01
3.7
1.35
1.57
1.27
1.57
-
MAX.
-
2.1
2.85
2.44
3.38
6
0.1
10
1.66
1.96
1.50
1.89
± 200
UNITS
V
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Eon
-
Eoff
IC = 100 A, VCC = 360 V, VGE = 15 V,ï
Rg = 4.7 ï, L = 200 μH, TJ = 25 °C
-
Etot
-
Eon
-
Eoff
-
Etot
-
td(on)
IC = 100 A, VCC = 360 V, VGE = 15 V,ï
Rg = 4.7 ï, L = 200 μH, TJ = 125 °C
-
tr
-
td(off)
-
tf
-
RBSOA
TJ = 150 °C, IC = 200 A,ï
Rg = 27 ïï¬ï VGE = 15 V to 0
SCSOA
TJ = 150 °C, VCC = 400 V, VP = 600 V,ï
Rg = 27 ïï¬ï VGE = 15 V to 0
10
trr
-
Irr
IF = 50 A, dIF/dt = 200 A/μs,ï
VCC = 400 V, TJ = 25 °C
-
Qrr
-
trr
-
Irr
IF = 50 A, dIF/dt = 200 A/μs,ï
VCC = 400 V, TJ = 125 °C
-
Qrr
-
TYP.
0.6
1.1
1.7
0.8
1.3
2.1
197
50
225
72
Fullsquare
-
116
11
600
152
16
1215
MAX.
-
-
-
-
-
-
-
-
-
-
-
140
15
1050
190
20
1900
UNITS
mJ
ns
ns
A
nC
ns
A
nC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction and storage temperature range
Junction to case per leg
IGBT
Diode
TJ, TStg
RthJC
Case to sink per module
Mounting torque
case to heatsink
case to terminal 1, 2, 3
RthCS
Weight
MIN.
-40
-
-
-
-
-
-
TYP.
-
0.23
0.38
0.1
-
-
185
MAX.
150
0.32
0.64
-
4
3
-
UNITS
°C
°C/W
Nm
g
Revision: 10-Jun-15
2
Document Number: 94501
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese