VS-GB100TS60NPBF Datasheet, PDF (3/9 Pages) Vishay Siliconix – INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 A

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VS-GB100TS60NPbF
Vishay Semiconductors
200
Vge = 18V
Vge = 15V
150 ^{Vge = 12V}
100
Vge = 9V
50
0
0
1
2
3
4
5
6
V_CE (V)
Fig. 1 - Typical IGBT Output Characteristics
T_J = 25 °C, t_p = 500 μs
200
Vge = 18V
Vge = 15V
Vge = 12V
150
100
Vge = 9V
5
4.5
Ic = 200A
4
3.5
Ic = 100A
3
2.5
Ic = 50A
2
1.5
0
20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature,
V_GE = 15 V, 500 μs pulse width
200
150
100
50
0
0
1
2
3
4
5
6
V_CE (V)
Fig. 2 - Typical IGBT Output Characteristics
T_J = 125 °C, t_p = 500 μs
200
180
160
140
120
100
80
60
40
Tj = 125°C
20
Tj = 25°C
0
0
2
4
6
8
10
V_GE (V)
Fig. 3 - Typical Transfer Characteristics
V_CE = 20 V, t_p = 500 μs
50
Tj = 125°C
0
0.0
Tj = 25°C
0.5
1.0
1.5
2.0
V_F (V)
Fig. 5 - Diode Forward Characteristics, t_p = 500 μs
160
140
120
100
80
DC
60
40
20
0
0 20 40 60 80 100 120
Maximum DC Collector Current (A)
Fig. 6 - Maximum Collector Current vs.
Case Temperature
Revision: 10-Jun-15
3
Document Number: 94501
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