VS-GB100TS60NPBF Datasheet, PDF (4/9 Pages) Vishay Siliconix – INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 A

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VS-GB100TS60NPbF
Vishay Semiconductors
1.4
1.2
1.0
Eoff
0.8
0.6
Eon
0.4
0.2
0
0 20 40 60 80 100 120
I_C (A)
Fig. 7 - Typical Energy Loss vs. I_C, T_J = 125 °C,
L = 200 μH, V_CC = 360 V, R_g = 4.7 , V_GE = 15 V
1000
td(off)
td(on)
100
tf
tr
10
20
40
60
80
100
I (A)
Fig. 8 - Typical Switching Time vs. I_C
T_J = 125 °C, L = 200 μH, V_CC = 360 V,
R_g = 4.7 , V_GE = 15 V
1000
td(off)
td(on)
100 _tf
tr
10
0
10
20
30
40
50
R_G (Ω)
Fig. 10 - Typical Switching Time vs. R_g
T_J = 125 °C, L = 200 μH, V_CC = 360 V,
I_CE = 100 A, V_GE = 15 V
100
90
80
4.7 ohm
70
60
27 ohm
50
40
30
47 ohm
20
10
0
0 20 40 60 80 100 120
I_F (A)
Fig. 11 - Typical Diode I_rr vs. I_F,
T_J = 125 °C
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Eon
Eoff
10
20
30
40
50
R_g (Ω)
Fig. 9 - Typical Energy Loss vs. R_g
T_J = 125 °C, L = 200 μH, V_CC = 360 V,
I_CE = 100 A, V_GE = 15 V
100
80
60
40
20
0
0
10
20
30
40
50
R_G (Ω)
Fig. 12 - Typical Diode I_rr vs. R_g,
T_J = 125 °C, I_F = 100 A
Revision: 10-Jun-15
4
Document Number: 94501
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