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VS-FA40SA50LC_15 Datasheet, PDF (5/10 Pages) Vishay Siliconix – Power MOSFET, 40 A
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1
td(on)
0.1
td(off)
tf
tr
0.01
0
10
20
30
40
50
Drain to source current - IDS (A)
Fig. 11 - Typical MOSFET Switching Time vs. IDS, TJ = 125 °C,
VDD = 250 V, VGS = 10 V, L = 500 μH, RG = 2.4 
Diode used 60APH06
1
VS-FA40SA50LC
Vishay Semiconductors
1
td(on)
td(off)
tr
0.1
tf
0.01
0
10 20 30 40 50 60
RG (Ω)
Fig. 12 - Typical MOSFET Switching Time vs. RG, TJ = 125 °C,
IDS = 40 A , VDD = 250 V, VGS = 10 V, L = 500 μH
Diode used 60APH06
0.1
0.01
0.001
0.00001
Notes:
0.75
0.50
0.25
0.1
0.05
0.02
DC
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 13 - Maximum Thermal Impedance ZthJC Characteristics, MOSFET
16000
14000
12000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
8000
Ciss
6000
4000
2000
Coss
Crss
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig. 14 - Typical Capacitance vs. Drain to Source Voltage
20 ID = 38A
16
12
VDS = 400V
VDS = 250V
VDS = 100V
8
4
FOR TEST CIRCUIT
SEE FIGURE 19
0
0
80
160
240
320
400
QG , Total Gate Charge (nC)
Fig. 15 - Typical Gate Charge vs.
Gate to Source Voltage
Revision: 13-Aug-13
5
Document Number: 94803
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