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VS-FA40SA50LC_15 Datasheet, PDF (2/10 Pages) Vishay Siliconix – Power MOSFET, 40 A
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VS-FA40SA50LC
Vishay Semiconductors
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction and storage temperature range
Junction to case
Case to heatsink
Weight
TJ, TStg
RthJC
RthCS
Flat, greased surface
Mounting torque
Case style
MIN.
- 55
-
-
-
-
TYP. MAX.
-
150
-
0.23
0.05
-
30
-
-
1.3
SOT-227
UNITS
°C
°C/W
g
Nm
ELECTRICAL CHARACTERISTCS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Static drain to source on-resistance
V(BR)DSS
V(BR)DSS/TJ
RDS(on) (1)
VGS = 0 V, ID = 1.0 mA
Reference to 25 °C, ID = 1 mA
VGS = 10 V, ID = 23 A
Gate threshold voltage
Forward transconductance
VGS(th)
gfs
VDS = VGS, ID = 250 μA
VDS = VGS, ID = 250 μA, TJ = 125 °C
VDS = 50 V, ID = 23 A
VDS = 500 V, VGS = 0 V
Drain to source leakage current
IDSS
VDS = 500 V, VGS = 0 V, TJ = 125 °C
Gate to source forward leakage
Gate to source reverse leakage
VDS = 500 V, VGS = 0 V, TJ = 150 °C
VGS = 20 V
IGSS
VGS = - 20 V
Total gate charge
Gate to source charge
Gate to drain ("Miller") charge
Turn-on delay time
Qg
Qgs
Qgd
td(on)
ID = 38 A
VDS = 400 V
VGS = 10 V; see fig. 15 and 19 (1)
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
tr
td(off)
tf
td(on)
tr
td(off)
tf
LS
VDD = 250 V, ID = 40 A, Rg = 2.4
L = 500 μH, diode used: 60APH06
VDD = 250 V, ID = 40 A, Rg = 2.4
L = 500 μH, TJ = 125 °C, diode used:
60APH06
Between lead, and center of die
contact
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 14
Note
(1) Pulse width  300 μs, duty cycle  2 %
MIN.
500
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.65
106
3
1.9
29
0.5
30
0.2
-
-
280
37
150
143
33
107
36
145
35
110
40
5
6900
1600
580
MAX.
-
-
130
4
-
-
50
500
3
200
- 200
420
55
220
-
-
-
-
-
-
-
-
UNITS
V
V/°C
m
V
S
μA
mA
nA
nC
ns
ns
-
nH
-
-
pF
-
Revision: 13-Aug-13
2
Document Number: 94803
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