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VS-FA40SA50LC_15 Datasheet, PDF (1/10 Pages) Vishay Siliconix – Power MOSFET, 40 A | |||
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www.vishay.com
VS-FA40SA50LC
Vishay Semiconductors
Power MOSFET, 40 A
SOT-227
PRODUCT SUMMARY
VDSS
RDS(on)
ID
Type
Package
500 V
0.106 ï
40 A
Modules - MOSFET
SOT-227
FEATURES
⢠Fully isolated package
⢠Easy to use and parallel
⢠Low on-resistance
⢠Dynamic dV/dt rating
⢠Fully avalanche rated
⢠Simple drive requirements
⢠Low drain to case capacitance
⢠Low internal inductance
⢠UL approved file E78996
⢠Designed for industrial level
⢠Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third Generation Power MOSFETs from Vishay
Semiconductors provide the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.ï
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 W. The low thermal resistance
of the SOT-227 contribute to its wide acceptance
throughout the industry.ï
ï
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous drain current at VGS 10 V
Pulsed drain current
Power dissipation
Gate to source voltage
Single pulse avalanche energy
Repetitive avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
ID
IDM (1)
PD
VGS
EAS (2)
IAR (1)
EAR (1)
dV/dt (3)
TC = 25 °C
TC = 90 °C
TC = 25 °C
TC = 90 °C
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
TJ, TStg
VISO
M4 screw, on terminals and heatsink
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 18)
(2) Starting TJ = 25 °C, L = 500 μH, Rg = 2.4 ï, IAS = 40 A (see fig. 18)
(3) ISDï ï£ 40 A, dIF/dt ï£ 200 A/μs, VDD ï£ V(BR)DSS, TJ ï£ 150 °C
MAX.
40
29
150
543
261
± 20
400
13
42
10
- 55 to + 150
2.5
1.3
UNITS
A
W
V
mJ
A
mJ
V/ns
°C
kV
Nm
Revision: 13-Aug-13
1
Document Number: 94803
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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