SUP85N10-10-E3 Datasheet, PDF (5/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
Limited by R_DS(on)*
100
10
1
SUP85N10-10P
Vishay Siliconix
100 µs
1 ms
10 ms
100 ms, DC
300
240
180
120
60
0
0
0.1
T_C = 25 °C
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
120
100
80 _{Package Limited}
60
40
20
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Case
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
* The power dissipation P_D is based on T_J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64833
www.vishay.com
S11-2239-Rev. B, 14-Nov-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000