SUP85N10-10-E3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
10
V_GS = 10 V thru 7 V
100
8
80
6
60
V_GS = 6 V
4
40
2
20
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
150
0
0
0.020
SUP85N10-10P
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
120
T_C = - 55 °C
90
T_C = 25 °C
60
T_C = 125 °C
30
0.015
0.010
0.005
V_GS = 10 V
0
0
6000
5000
10
20
30
40
50
I_D - Drain Current (A)
Transconductance
C_iss
4000
3000
2000
1000
C_oss
0 ^Crss
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
0.000
0
20
40
60
80
100 120
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 16 A
8
6
4
V_DS = 50 V
V_DS = 25 V
V_DS = 75 V
2
0
0
20
40
60
80
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 64833
www.vishay.com
S11-2239-Rev. B, 14-Nov-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000