SUP85N10-10-E3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SUP85N10-10P
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
100
0.010 at V_GS = 10 V
I_D (A)
85^d
Q_g (Typ.)
77
TO-220AB
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Industrial
D
GD S
Top View
Ordering Information:
SUP85N10-10P-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 175 °C)
T_C = 25 °C
T_C = 70 °C
I_D
Pulsed Drain Current
I_DM
Avalanche Current
I_AS
Single Avalanche Energy^a
L = 0.1 mH
E_AS
Maximum Power Dissipation^a
T_C = 25 °C
T_A = 25 °C^c
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
100
± 20
85^d
83
240
60
180
227^b
3.75
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^c
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
Symbol
R_thJA
R_thJC
Limit
40
0.55
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 64833
www.vishay.com
S11-2239-Rev. B, 14-Nov-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000