SUP85N10-10-E3 Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.1
100
I_D = 20 A
10
1.7
V_GS = 10 V
1
1.3
0.1
0.9
0.01
T_J = 150 °C
T_J = 25 °C
T_J = - 50 °C
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
0.04
0.03
0.02
T_J = 125 °C
0.01
0.00
3
T_J = 25 °C
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
130
I_D = 1 mA
124
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_GS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.3
- 0.2
- 0.7
- 1.2
I_D = 1 mA
I_D = 250 µA
- 1.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
118
T_J = 150 °C
T_J = 25 °C
10
112
106
100
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Drain Source Breakdown Voltage vs. Junction Temperature
1
10^-5
10^-4
10^-3
10^-2
10^-1
1
t_AV (s)
Single Pulse Avalanche Current Capability vs. Time
www.vishay.com
Document Number: 64833
4
S11-2239-Rev. B, 14-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000