SUP40P10-43 Datasheet, PDF (5/6 Pages) Vishay Siliconix – P-Channel 100-V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
180
150
40
120
30
90
20
60
10
30
0
0
0
25
50
75
100 125 150
0
T_C - Case Temperature (°C)
Current Derating*
SUP40P10-43
Vishay Siliconix
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Case
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65458.
Document Number: 65458
S09-2035-Rev. A, 05-Oct-09
www.vishay.com
5