SUP40P10-43 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 100-V (D-S) MOSFET

New Product
SUP40P10-43
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
20
35
V_GS = 10 V thru 4 V
16
30
25
12
20
15
8
10
3V
4
5
2V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
T_A = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.044
7000
0.042
0.040
V_GS = 4.5 V
6000
5000
C_iss
4000
0.038
0.036
V_GS = 10 V
0.034
0
5
10 15 20 25 30 35
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
3000
2000
1000
C_oss
0 ^Crss
0 10 20 30 40 50 60 70 80
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 9.2 A
8
V_DS = 50 V
6
V_DS = 80 V
4
2.3
I_D = 9.2 A
2.0
1.7
V_GS = 10 V, 4.5 V
1.4
1.1
2
0.8
0
0
20
40
60
80
100 120
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65458
S09-2035-Rev. A, 05-Oct-09
www.vishay.com
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