SUP40P10-43 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 100-V (D-S) MOSFET

New Product
P-Channel 100-V (D-S) MOSFET
SUP40P10-43
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
- 100
R_DS(on) (Ω)
0.043 at V_GS = - 10 V
0.048 at V_GS = - 4.5 V
I_D (A)^c
- 36
- 34.4
Q_g (Typ.)
54 nC
TO-220AB
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• LCD Inverter
- Backlighting
S
G
Drain connected to Tab
GD S
Top View
Ordering Information: SUP40P10-43-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)^c
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy^a
Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 125 °C
L = 0.1 mH
T_C = 25 °C
T_A = 25 °C
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
P_D
T_J, T_stg
D
P-Channel MOSFET
Limit
- 100
± 20
- 36
- 16
- 40
- 35
61
125^b
2.0
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Free Air
Junction-to-Case
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
Symbol
R_thJA
R_thJC
Limit
62
1.0
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 65458
S09-2035-Rev. A, 05-Oct-09
www.vishay.com
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