SUP40P10-43 Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 100-V (D-S) MOSFET

New Product
SUP40P10-43
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.08
T_J = 150 °C
10
0.07
T_A = 125 °C
0.06
0.05
0.04
T_J = 25 °C
0.03
T_A = 25 °C
1
0.0
0.2 0.4
0.6
0.8
1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.3
0.02
2
3
4
5
6
7
8
9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
2.1
1.9
I_D = 250 µA
1.7
10
1.5
1.3
1.1
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
1
T_A
L I_A
BV - V_DD
1
0.000001 0.00001
0.0001
0.001
0.01
T_A - Time In Avalanche (s)
Single Pulse Avalanche Capability
10 µs
100 µs
1 ms
10 ms
DC
0.1
T_A = 25 °C
Single Pulse
BVDSS
0.01
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65458
S09-2035-Rev. A, 05-Oct-09