SUM90N03-2M2P Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
SUM90N03-2m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
300
300
250
250
200
200
150
150
Package Limited
100
100
50
50
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Current Derating*
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
2
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- ⁴
10- ³
10- ²
10- ¹
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74342
Document Number: 74342
S-71948-Rev. B, 10-Sep-07
www.vishay.com
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