SUM90N03-2M2P Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
SUM90N03-2m2P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
30
0.0022 at V_GS = 10 V
0.0027 at V_GS = 4.5 V
I_D (A)^{a, e}
90
90
Q_g (Typ)
82 nC
TO-263
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• OR-ing
• Server
D
RoHS
COMPLIANT
G DS
Top View
Ordering Information: SUM90N03-2m2P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
90^{a, e}
Continuous Drain Current (T_J = 175 °C)
T_C = 70 °C
T_A = 25 °C
I_D
90^e
33^{b, c}
A
T_A = 70 °C
29.8^{b, c}
Pulsed Drain Current
I_DM
200
Avalanche Current Pulse
Single Pulse Avalanche Energy
I_AS
36
L = 0.1 mH
E_AS
64.8
V
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
90^{a, e}
3.13^{b, c}
A
T_C = 25 °C
250^a
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
175
3.75^{b, c}
W
T_A = 70 °C
2.63^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
R_thJA
Maximum Junction-to-Case
Steady State
R_thJC
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
Document Number: 74342
S-71948-Rev. B, 10-Sep-07
Typical
32
0.5
Maximum
40
0.6
Unit
°C/W
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